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There is some delaminated matter on this page but most of it is visible and does not appear to be a virus.
bosch sans bold font download zip rarThe present invention relates to surface modifying agents for chemical-mechanical polishing (CMP) processes.
As semiconductor integrated circuits (IC) continue to shrink in size, the inter-metal dielectric (IMD) or other interlayer dielectric films, used to electrically insulate metal layers from each other, have become thinner. In addition, the reduction in the size of ICs requires a more planar surface topography for metallization. The requirement for planarization is particularly critical during the fabrication of multilevel integrated circuits, such as in ULSI applications. This is especially so for post-CMP cleaning steps, such as spin-clean after CMP.
In CMP, a chemical mechanical polishing (CMP) process is used to remove or planarize the layer, thereby globally planarizing the IC. During the CMP process, the wafer is placed on a rotating polishing pad which in turn rotates on a table. A CMP slurry, which can include chemicals and abrasive particles, is applied to the surface of the wafer as the pad rotates. As the pad rotates, the wafer is brought into contact with the polishing pad. As a result of the rotation of the pad and the movement of the wafer, the wafer is polishingly removed. The polishing pad and wafer are then washed.
The planarizing effect is the result of a combination of chemical etching and mechanical buffing. The chemical etching is controlled by the nature of the slurry and the time of contact between the wafer and the pad. The degree of planarization can be enhanced by the inclusion of polysilicon particles in the slurry. In addition to the planarization effect, the CMP slurry also lubricates the mechanical buffing, thereby increasing the polish rate and improving the polishing rate consistency.
After the wafer has been polished, for example, in the formation of an interconnect structure, the wafer is typically rinsed
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